Summary
Overview
Work history
Education
Skills
Languages
Timeline
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Xiaoxuan zhao

Summary

Chip system and device engineer with 3 years of experience in end-to-end memory chip design. Proficient in the key parameters and performance of new memory. Skilled at identifying or anticipating chip engineering problems and providing solutions. Experienced in cooperation with fabs.

Overview

4
4
years of professional experience
9
9
years of post-secondary education

Work history

Senior Chip System Engineer

Hisilicon
Beijing, China
02.2020 - Current

In Project A, led Engineering Design and Engineering Analysis

  • Established the Engineering Baseline of the memory project, which improved the team’s ability to manage the engineering design.
  • Led the engineering team to design and analyze in the field of signal integrity/ power integrity/ package/ thermal/ die stress/ DFR/ reliability.

In Project B, managed a test chip from conception to completion

  • Designed the top architecture of a new memory test chip and delivered the top-level circuitry with zero defects.

Managed Project C and designed core circuits

  • Led the design of customized periphery circuits, which resulted in a 5% array efficiency increase.
  • Tracked the progress and risks, and promoted collaboration among related teams to ensure the success of the project.

Education

Doctor of Philosophy - Physics

University of Paris-Saclay
Paris, France
09.2016 - 12.2019

Doctor of Philosophy - Microelectronics and Solid-State Electronics

Beihang University
Beijing, China
09.2014 - 12.2019

Skills

    Journals

  • Duan, Xinlv, …, Zhao, Xiaoxuan, et al "Novel vertical channel-all-around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM with high density beyond 4F 2 by monolithic stacking" IEEE Transactions on Electron Devices 694 (2022): 2196-2202
  • Zhao, Xiaoxuan, et al "Spin–orbit torque driven multi-level switching in He irradiated W–CoFeB–MgO Hall bars with perpendicular anisotropy" Applied Physics Letters 11624 (2020)
  • Zhao, Xiaoxuan, et al "Enhancing domain wall velocity through interface intermixing in W-CoFeB-MgO films with perpendicular anisotropy" Applied Physics Letters 11512 (2019)
  • Zhao, Xiaoxuan, et al "Ultra-efficient spin–orbit torque induced magnetic switching in W/CoFeB/MgO structures" Nanotechnology 3033 (2019): 335707
  • Patents

  • "An integrated system and application method of Ultra-thin film preparation, interface characterization, and manipulation" [P], CN106555166 B, 20189—21
  • Published 4 patents in Hisilicon

Languages

Chinese (Mandarin)
Native
English
Fluent
French
Elementary

Timeline

Senior Chip System Engineer

Hisilicon
02.2020 - Current

Doctor of Philosophy - Physics

University of Paris-Saclay
09.2016 - 12.2019

Doctor of Philosophy - Microelectronics and Solid-State Electronics

Beihang University
09.2014 - 12.2019
Xiaoxuan zhao